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1998
Ryen, L, C Kwon, M Robson, Ramamoorthy Ramesh, and E Olsson."Influence of strain and annealing on microstructure and magnetic/electric properties of epitaxial (001) La0.70Ba0.30MnO3 films."Doktorsavhandlingar vid Chalmers Tekniska Hogskola
(1998) 1-16.
Friessnegg, T, S Aggarwal, B Nielsen, Ramamoorthy Ramesh, D.J Keeble, and E.H Poindexter."Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation."IEEE International Symposium on Applications of Ferroelectrics
(1998) 147-150.
Aggarwal, S, A.S Prakash, T.K Song, S Sadashivan, A.M Dhote, B Yang, Ramamoorthy Ramesh, Y Kisler, and S.E Bernacki."Lead based ferroelectric capacitors for low voltage non-volatile memory applications."Integrated Ferroelectrics
19 (1998) 159-177. DOI
Park, J.-H, E Vescovo, H.-J Kim, C Kwon, Ramamoorthy Ramesh, and T Venkatesan."Magnetic properties at surface boundary of a half-metallic ferromagnet La0.7Sr0.3MnO3."Physical Review Letters
81 (1998) 1953-1956. DOI
Ogale, S, K Ghosh, R Sharma, R Greene, Ramamoorthy Ramesh, and T Venkatesan."Magnetotransport anisotropy effects in epitaxial magnetite thin films."Physical Review B - Condensed Matter and Materials Physics
57 (1998) 7823-7828. DOI
Venkatesan, T, M Rajeswari, Z.-W Dong, S.B Ogale, and Ramamoorthy Ramesh."Manganite-based devices: Opportunities, bottlenecks and challenges."Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
356 (1998) 1661-1680. DOI
Li, H, B Yang, A Dhote, S Aggarwal, L Salamanca-Riba, and Ramamoorthy Ramesh."Microstructure investigations and structure-property correlations in ferroelectric thin-film capacitors."Proceedings of the Materials Research Society Symposium -
493 (1998) 171-176.
Gruverman, A, S.A Prakash, S Aggarwal, Ramamoorthy Ramesh, O Auciello, and H Tokumoto."Nanoscale investigation of polarization retention loss in ferroelectric thin films via scanning force microscopy."Proceedings of the Materials Research Society Symposium -
493 (1998) 53-58.
Auciello, O, A Gruverman, H Tokumoto, S.A Prakash, S Aggarwal, and Ramamoorthy Ramesh."Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films."MRS Bulletin
23 (1998) 33-41.
Dong, Z.W, S.P Pai, Ramamoorthy Ramesh, T Venkatesan, M Johnson, Z.Y Chen, A Cavanaugh, Y.G Zhao, X.L Jiang, R.P Sharma, S Ogale, and R.L Greene."Novel high-Tc transistors with manganite oxides."Journal of Applied Physics
83 (1998) 6780-6782. DOI
Bernhard, J.M, A Rouse, E.D Sosa, D.E Golden, B.R Chalamala, S Aggarwal, B.E Gnade, and Ramamoorthy Ramesh."Photoelectric workfunctions of metals oxide films and emission characteristics of molybdenum emitter tips with oxide coatings."Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
(1998) 32-33.
Aggarwal, S, and Ramamoorthy Ramesh."Point defect chemistry of metal oxide heterostructures."Annual Review of Materials Science
28 (1998) 463-499. DOI
Alpay, S.P, A.S Prakash, S Aggarwal, P Shuk, M Greenblatt, Ramamoorthy Ramesh, and A.L Roytburd."Polydomain formation in epitaxial PbTiO3 films."Scripta Materialia
39 (1998) 1435-1441. DOI
Alpay, S.P, A.S Prakash, S Aggarwal, Ramamoorthy Ramesh, A.L Roytburd, P Shuk, and M Greenblatt."Polydomain structure of epitaxial PbTiO3 films on MgO."Proceedings of the Materials Research Society Symposium -
493 (1998) 111-116.
Ghosh, K, S.B Ogale, S.P Pai, M Robson, E Li, I Jin, Z.-W Dong, R.L Greene, Ramamoorthy Ramesh, T Venkatesan, and M Johnson."Positive giant magnetoresistance in a Fe3O4/SrTiO3/La0.7Sr 0.3MnO3 heterostructure."Applied Physics Letters
73 (1998) 689-691. DOI
Ramesh, Ramamoorthy."Process integration of PZT thin films with oxide electrodes for high density nonvolatile memories."Integrated Ferroelectrics
20 (1998) 69. DOI
Auciello, O, C.M Foster, and Ramamoorthy Ramesh."Processing technologies for ferroelectric thin films and heterostructures."Annual Review of Materials Science
28 (1998) 501-531. DOI
Song, T.K, J Ahn, B Yang, S Aggarwal, and Ramamoorthy Ramesh."Pulse width dependent activation voltage measurements of ferroelectric (Pb,La)(Zr,Ti)O3 thin film capacitors for nonvolatile memories."Journal of the Korean Physical Society
32 (1998) S1721-S1723.
Aggarwal, S, S.R Perusse, S Madhukar, T.K Song, C.L Canedy, Ramamoorthy Ramesh, S Choopun, R.P Sharma, T Venkatesan, and S.M Green."Rapid thermal annealing of oxide electrodes for nonvolatile ferroelectric memory structures."Journal of Electroceramics
2 (1998) 171-179. DOI
Lofland, S.E, S.M Bhagat, V.V Srinivasu, Ramamoorthy Ramesh, B.M Simion, and G Thomas."Spin reorientation transition due to thickness ratio variation in EuBi 2Fe5O12/Y3Fe5O 12 multilayer films - Ferrimagnetic resonance studies."Journal of Applied Physics
83 (1998) 3750-3753. DOI
Im, J, A.R Krauss, A.M Dhote, D.M Gruen, O Auciello, Ramamoorthy Ramesh, and R.P.H Chang."Studies of metallic species and oxygen incorporation during sputter-deposition of SrBi2Ta2O9 films, using mass spectroscopy of recoiled ions."Applied Physics Letters
72 (1998) 2529-2531. DOI
Dolin, Jennifer R, and Ned R Raynolds."The ENERGY STAR Purchasing Initiative."ACEEE Summer Study on Energy Efficiency in Buildings, August 23-28, 1998
7 (1998).
Auciello, O, J.F Scott, and Ramamoorthy Ramesh."The physics of ferroelectric memories."Physics Today
51 (1998) 22-27. DOI
Ryen, L, C Kwon, Ramamoorthy Ramesh, and E Olsson."Two-phase separation in epitaxial (001) SrTiO3 thin films on LaAlO3 substrates."Doktorsavhandlingar vid Chalmers Tekniska Hogskola
(1998) 1-6.
Zhao, Y.G, J.J Li, R Shreekala, H.D Drew, C.L Chen, W.L Cao, C.H Lee, M Rajeswari, S.B Ogale, Ramamoorthy Ramesh, G Baskaran, and T Venkatesan."Ultrafast laser induced conductive and resistive transients in La0.7Ca0.3MnO3: Charge transfer and relaxation dynamics."Physical Review Letters
81 (1998) 1310-1313. DOI