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Polarization control of electron tunneling into ferroelectric surfaces

Publication Type

Journal Article

Authors

Maksymovych, P, S Jesse, P Yu, Ramamoorthy Ramesh, A.P Baddorf, S.V Kalininl

DOI

10.1126/science.1171200

Abstract

We demonstrate a highly reproducible control of local electron transport through a ferroelectric oxide via its spontaneous polarization. Electrons are injected from the tip of an atomic force microscope into a thin film of lead-zirconate titanate, Pb(Zr0.2Ti0.8)O3, in the regime of electron tunneling assisted by a high electric field (Fowler-Nordheim tunneling). The tunneling current exhibits a pronounced hysteresis with abrupt switching events that coincide, within experimental resolution, with the local switching of ferroelectric polarization. The large spontaneous polarization of the PZT film results in up to 500-fold amplification of the tunneling current upon ferroelectric switching. The magnitude of the effect is subject to electrostatic control via ferroelectric switching, suggesting possible applications in ultrahigh-density data storage and spintronics.

Journal

Science

Volume

324

Year of Publication

2009

ISSN

00368075

Notes

cited By 337

Research Areas

Ramesh Lab