Oblique ion texturing of yttria-stabilized zirconia: the {211}<111> structure

Publication Type

Journal Article

Date Published

11/2002

Authors

DOI

Abstract

Amorphous (Zr,Y)Ox films were synthesized by reactive magnetron sputtering and subsequently crystallized by oblique ion bombardment. Crystalline texture nucleated by the ion beam was replicated by solid-phase epitaxial growth throughout the formerly amorphous yttria-stabilized zirconia (YSZ) film. The resulting YSZ films have (211) orientation normal to the substrate with in-plane directions (111), parallel, and (110), transverse, to the azimuth of the ion beam. We hypothesize that the texture mechanism involves ion-induced film compression and shear. The results, taken together with prior work, show that oblique ion texturing of amorphous films is a general phenomenon that can be used to fabricate substrates with more than one type of crystallographic orientation.

Journal

Applied Physics Letters

Volume

82

Year of Publication

2003

Issue

3

ISSN

0003-6951

Notes

LBNL-51802 NOT IN FILE

Organization