Identifying different stacking sequences in few-layer CVD-grown

Publication Type

Journal Article

Date Published

01/2016

Authors

DOI

Abstract

Atomically thin MoS2 grown by chemical vapor deposition (CVD) is a promising candidate for next-generation electronics due to inherent CVD scalability and controllability. However, it is well known that the stacking sequence in few-layer MoS2 can significantly impact electrical and optical properties. Herein we report different intrinsic stacking sequences in CVD-grown few-layer MoS2 obtained by atomic-resolution annular-dark-field imaging in an aberration-corrected scanning transmission electron microscope operated at 50 keV. Trilayer MoS2 displays a new stacking sequence distinct from the commonly observed 2H and 3R phases of MoS2. Density functional theory is used to examine the stability of different stacking sequences, and the findings are consistent with our experimental observations.

Journal

Physical Review B

Volume

93

Year of Publication

2016

Issue

4

ISSN

2469-9950

Organization