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Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel

Publication Type

Journal Article

Authors

Schrott, A.G., J.A. Misewich, V. Nagarajan, Ramamoorthy Ramesh

DOI

10.1063/1.1588753

Abstract

The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.

Journal

Applied Physics Letters

Volume

Year of Publication

2003

ISSN

00036951

Notes

cited By 39

Research Areas

Ramesh Lab