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The Energy Technologies Area (ETA) is unique in translating fundamental scientific discoveries into scalable technology adoption. Our approach combines an understanding of the marketplace and the role of state and federal regulation and policies. ETA's research drives real-world, practical results that affect and improve the everyday lives of Americans and those across the globe. Saving energy and increasing resilience are key to the foundation of our research, which is driven by technoeconomic analysis and in-lab experimentation and discovery.

Epitaxial BiFeO 3 thin films on Si

Publication Type

Journal Article

Authors

Wang, J, H Zheng, Z Ma, S Prasertchoung, M Wuttig, R Droopad, J Yu, K Eisenbeiser, Ramamoorthy Ramesh

DOI

10.1063/1.1799234

Abstract

The growth of epitaxial BiFeO 3 (BFO) thin films on Si substrate using pulsed laser deposition with SrTiO 3 (STO) as a template layer and SrRuO 3 (SRO) as a bottom electrode was investigated. The structure of the film was investigated using x-ray diffraction and transmission electron microscopy. It was observed that the value of spontaneous polarization of the films was ∼45 μC/Cm 2. The results show that the 400-nm-thick films has a large piezoelectric coefficient of ∼120 pm/V, which is useful to applications in actuators and microelectromechanical (MEMS) devices.

Journal

Applied Physics Letters

Volume

Year of Publication

2004

ISSN

00036951

Notes

cited By 231

Research Areas

Ramesh Lab