Publications
Publications by Research Area
Publications by Division
X Author: A.L Roytburd
2007
Ouyang, J, J Slusker, I Levin, D.-M Kim, C.-B Eom, Ramamoorthy Ramesh, and A.L Roytburd."Engineering of self-assembled domain architectures with ultra-high piezoelectric response in epitaxial ferroelectric films."Advanced Functional Materials
17 (2007) 2094-2100. DOI
2006
Ouyang, J, Ramamoorthy Ramesh, and A.L Roytburd."Theoretical investigation of the intrinsic piezoelectric properties for tetragonal BaTiO 3 epitaxial films."Applied Surface Science
252 (2006) 3394-3400. DOI
2005
Ma, Z, F Zavaliche, L Chen, J Ouyang, J Melngailis, A.L Roytburd, V Vaithyanathan, D.G Schlom, T Zhao, and Ramamoorthy Ramesh."Effect of 90° domain movement on the piezoelectric response of patterned PbZr 0.2 Ti 0.8 O 3 SrTiO 3 Si heterostructures."Applied Physics Letters
87 (2005). DOI
Ouyang, J, Ramamoorthy Ramesh, and A.L Roytburd."Effective direct piezoelectric constants in epitaxial ferroelectric films as MEMS sensors."Proceedings of the Materials Research Society Symposium
881 (2005) 125-130.
Ouyang, J, Ramamoorthy Ramesh, and A.L Roytburd."Intrinsic effective piezoelectric coefficient e 31,f for ferroelectric thin films."Applied Physics Letters
86 (2005) 1-3. DOI
Ouyang, J, D.M Kim, C.B Eom, Ramamoorthy Ramesh, and A.L Roytburd."Orientation dependence of the intrinsic converse longitudinal piezoelectric constant for 0.67Pb(Mg1/3Nb2/3)O3-0. 33PbTiO3 ferroelectric films with a rhombohedral structure."Smart Materials and Structures
14 (2005) 524-528. DOI
Li, J, I Levin, J Slutsker, V Provenzano, P.K Schenck, Ramamoorthy Ramesh, J Ouyang, and A.L Roytburd."Self-assembled multiferroic nanostructures in the Co Fe 2 O 4 -PbTi O 3 system."Applied Physics Letters
87 (2005). DOI
Ouyang, J, Ramamoorthy Ramesh, and A.L Roytburd."Theoretical predictions for the intrinsic converse longitudinal piezoelectric constants of lead zirconate titanate epitaxial films."Advanced Engineering Materials
7 (2005) 229-232. DOI
2004
Li, J.-H, L Chen, V Nagarajan, Ramamoorthy Ramesh, and A.L Roytburd."Finite element modeling of piezoresponse in nanostructured ferroelectric films."Applied Physics Letters
84 (2004) 2626-2628. DOI
Chen, L, J Ouyang, C.S Ganpule, V Nagarajan, Ramamoorthy Ramesh, and A.L Roytburd."Formation of 90° elastic domains during local 180° switching in epitaxial ferroelectric thin films."Applied Physics Letters
84 (2004) 254-256. DOI
Ouyang, J, S.Y Yang, L Chen, Ramamoorthy Ramesh, and A.L Roytburd."Orientation dependence of the converse piezoelectric constants for epitaxial single domain ferroelectric films."Applied Physics Letters
85 (2004) 278-280. DOI
2003
Chen, L, V Nagarajan, Ramamoorthy Ramesh, and A.L Roytburd."Nonlinear electric field dependence of piezoresponse in epitaxial ferroelectric lead zirconate titanate thin films."Journal of Applied Physics
94 (2003) 5147-5152. DOI
2002
Ganpule, C.S, V Nagarajan, B.K Hill, A.L Roytburd, E.D Williams, Ramamoorthy Ramesh, S.P Alpay, A Roelofs, R Waser, and L.M Eng."Imaging three-dimensional polarization in epitaxial polydomain ferroelectric thin films."Journal of Applied Physics
91 (2002) 1477-1481. DOI
Ganpule, C.S, A.L Roytburd, V Nagarajan, B.K Hill, S.B Ogale, E.D Williams, Ramamoorthy Ramesh, and J.F Scott."Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films."Physical Review B - Condensed Matter and Materials Physics
65 (2002) 1-7. DOI
Ganpule, C.S, A.L Roytburd, V Nagarajan, B.K Hill, S.B Ogale, E.D Williams, Ramamoorthy Ramesh, and J.F Scott."Polarization relaxation kinetics and 180° domain wall dynamics in ferroelectric thin films."Physical Review B - Condensed Matter and Materials Physics
65 (2002) 141011-141017.
Nagarajan, V, A Stanishevsky, L Chen, T Zhao, B.-T Liu, J Melngailis, A.L Roytburd, Ramamoorthy Ramesh, J Finder, Z Yu, R Droopad, and K Eisenbeiser."Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si."Applied Physics Letters
81 (2002) 4215-4217. DOI
2001
Alpay, S.P, A.L Roytburd, V Nagarajan, L.A Bendersky, and Ramamoorthy Ramesh."Cellular domain architecture of stress-free epitaxial ferroelectric films."Proceedings of the Materials Research Society Symposium -
655 (2001) XLXXV-XLXXVI.
Nagarajan, V, C.S Ganpule, H Li, L Salamanca-Riba, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh."Control of domain structure of epitaxial PbZr0.2Ti0.8O3 thin films grown on vicinal (001) SrTiO3 substrates."Applied Physics Letters
79 (2001) 2805-2807. DOI
Li, H, A.L Roytburd, S.P Alpay, T.D Tran, L Salamanca-Riba, and Ramamoorthy Ramesh."Dependence of dielectric properties on internal stresses in epitaxial barium strontium titanate thin films."Applied Physics Letters
78 (2001) 2354-2356. DOI
Ganpule, C.S, A.L Roytburd, V Nagarajan, A Stanishevsky, J Melngailis, E.D Williams, and Ramamoorthy Ramesh."Nanoscale electromechanical phenomena in ferroelectric thin films."Proceedings of the Materials Research Society Symposium -
655 (2001) XVI-XVII.
Roytburd, A.L, S.P Alpay, L.A Bendersky, V Nagarajan, and Ramamoorthy Ramesh."Three-domain architecture of stress-free epitaxial ferroelectric films."Journal of Applied Physics
89 (2001) 553-556. DOI
2000
Canedy, C.L, H Li, S.P Alpay, L Salamanca-Riba, A.L Roytburd, and Ramamoorthy Ramesh."Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects."Applied Physics Letters
77 (2000) 1695-1697. DOI
Ganpule, C.S, V Nagarajan, S.B Ogale, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh."Domain nucleation and relaxation kinetics in ferroelectric thin films."Applied Physics Letters
77 (2000) 3275-3277. DOI
Nagarajan, V, S.P Alpay, C.S Ganpule, B Nagaraj, S Aggarwal, A.L Roytburd, E.D Williams, and Ramamoorthy Ramesh."Epitaxial PMN-PT relaxor thin films: dependence of dielectric and piezoelectric properties on film thickness."Proceedings of the Materials Research Society Symposium -
596 (2000) 505-510.
Roytburd, A.L, S.P Alpay, V Nagarajan, C.S Ganpule, S Aggarwal, E.D Williams, and Ramamoorthy Ramesh."Measurement of internal stresses via the polarization in epitaxial ferroelectric films."Physical Review Letters
85 (2000) 190-193. DOI